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| JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES Low saturation voltage Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol VCBO VCEO VEBO IC PC www..com Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value 80 60 5 3 2 150 -55-150 Units V V V A W Tj Tstg ELECTRICAL CHARACTERISTICS (Tamb=25 unless Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test otherwise conditions specified) MIN 80 60 5 10 10 100 320 1 1.5 8 70 V V MHz pF TYP MAX UNIT V V V A A IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=60V, IE=0 VEB=4V, IC=0 VCE=5V, IC=0.5A IC=2A, IB=0.2A IC=2A, IB=0.2A VCE=5V, IC=0.5A, f=5MHz VCB=10V, IE=0, f=1MHz Typical Characteristics 2SD2061 www..com |
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